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The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
Type:
Journal
Info:
Mat. Res. Soc. Symp. Proc. Vol. 716
Date:
2002-01-01
Author Information
| Name | Institution |
|---|---|
| Hyungjun Kim | IBM |
| C. Cabral | IBM |
| C. Lavoie | IBM |
| S. M. Rossnagel | IBM |
Films
Plasma Ta
Plasma TaNx
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Substrates
| Silicon |
Notes
| 1231 |