Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Applied Physics 92, 7080-7085 (2002)
Date:
2002-09-16
DOI:
http://dx.doi.org/10.1063/1.1519949

Author Information

Name Institution
Hyungjun KimIBM
A. J. KellockIBM
S. M. RossnagelIBM

Films

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FRES, Forward Recoil Elastic Spectrometry
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Substrates

Si(001)
SiO2

Notes

1227