Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
Type:
Journal
Info:
Applied Surface Science 362 (2016) 176 - 181
Date:
2015-11-09
Author Information
| Name | Institution |
|---|---|
| Jeong Hwan Han | Hanyang University |
| Hyo Yeon Kim | Korea Research Institute of Chemical Technology |
| Sang Chan Lee | Korea Research Institute of Chemical Technology |
| Da Hye Kim | Korea Research Institute of Chemical Technology |
| Bo Keun Park | Korea Research Institute of Chemical Technology |
| Jin-Seong Park | Korea Research Institute of Chemical Technology |
| Dong Ju Jeon | Korea Research Institute of Chemical Technology |
| Taek-Mo Chung | Korea Research Institute of Chemical Technology |
| Chang Gyoun Kim | Korea Research Institute of Chemical Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Density
Analysis: -
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Substrates
| Silicon |
Notes
| 477 |