Publication Information

Title: Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

Type: Journal

Info: Applied Surface Science 362 (2016) 176 - 181

Date: 2015-11-09

DOI: http://dx.doi.org/10.1016/j.apsusc.2015.11.095

Author Information

Name

Institution

Hanyang University

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Films

Plasma TaNx using Unknown

Deposition Temperature Range = 150-250C

0-0-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

-

Density

Unknown

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Unknown

-

Resistivity, Sheet Resistance

Unknown

-

Substrates

Silicon

Keywords

Diffusion Barrier

Notes

477



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