Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma

Type:
Journal
Info:
Journal of Electroceramics, v. 36, n. 1, p. 165--169 (2016)
Date:
2016-01-25
DOI:
http://dx.doi.org/10.1007/s10832-016-0015-4

Author Information

Name Institution
Ha-Jin LeePusan National University
Jin-Seong ParkHanyang University
Se-Hun KwonPusan National University

Films

Plasma TaNx

Hardware used: Unknown
t-Amylimidotris(dimethylamido)tantalum(V), (NtAm)(NMe2)3Ta, TAIMATA
CAS#: 629654-53-1
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H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 230C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Anneal
Diagnostic: -

Substrates

SiO2

Notes

771