Publication Information

Title: Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma

Type: Journal

Info: Journal of Electroceramics, v. 36, n. 1, p. 165--169 (2016)

Date: 2016-01-25

DOI: http://dx.doi.org/10.1007/s10832-016-0015-4

Author Information

Name

Institution

Pusan National University

Hanyang University

Pusan National University

Films

Plasma TaNx using Unknown

Deposition Temperature = 230C

629654-53-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Resistivity, Sheet Resistance

Four-point Probe

-

Microstructure

XRD, X-Ray Diffraction

-

Adhesion

Scotch Tape Test

-

Diffusion Barrier Properties

Anneal

-

Substrates

SiO2

Keywords

Notes

771



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