The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

Type:
Journal
Info:
Journal of Applied Physics 95, 5848-5855 (2004)
Date:
2004-02-25
DOI:
http://dx.doi.org/10.1063/1.1704863

Author Information

Name Institution
Hyungjun KimIBM
C. LavoieIBM
Matthew CopelIBM
Vijay NarayananIBM
Dong-Jin ParkIBM
S. M. RossnagelIBM

Films

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 4000EX

Characteristic: Chemical Composition, Impurities
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Thermal Stability
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Optical Scattering
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Diagnostic: -

Substrates

Si(001)
SiO2

Notes

1242