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Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
Type:
Journal
Info:
Journal of The Electrochemical Society, 153 (11) C751-C754 (2006)
Date:
2006-07-24
Author Information
| Name | Institution |
|---|---|
| Hoi-Sung Chung | Korea Advanced Institute of Science and Technology |
| Jung-Dae Kwon | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Plasma TaNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Substrates
| SiO2 |
Notes
| 1316 |