Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma

Type:
Journal
Info:
Journal of The Electrochemical Society, 153 (11) C751-C754 (2006)
Date:
2006-07-24
DOI:
http://dx.doi.org/10.1149/1.2344834

Author Information

Name Institution
Hoi-Sung ChungKorea Advanced Institute of Science and Technology
Jung-Dae KwonKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma TaNx

Hardware used: Custom Direct Capacitively Coupled Plasma
TaF5, Tantalum Pentafluoride
CAS#: 7783-71-3
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

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N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

1316