Publication Information

Title:
Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (11) H885-H888 (2008)
Date:
2008-07-29

Author Information

Name Institution
Sung-Wook KimKorea Advanced Institute of Science and Technology
Se-Hun KwonKorea Advanced Institute of Science and Technology
Seong-Jun JeongKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Diffusion Barrier Properties
Analysis: Custom

Characteristic: Adhesion
Analysis: Tape Test

Substrates

SiO2

Keywords

Notes

Investigated how Ru co-reactant impacts Ta phase
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