Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (11) H885-H888 (2008)
Date:
2008-07-29
Author Information
Name | Institution |
---|---|
Sung-Wook Kim | Korea Advanced Institute of Science and Technology |
Se-Hun Kwon | Korea Advanced Institute of Science and Technology |
Seong-Jun Jeong | Korea Advanced Institute of Science and Technology |
Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Plasma TaNx
Plasma RuTaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Diffusion Barrier Properties
Analysis: Custom
Characteristic: Adhesion
Analysis: Tape Test
Substrates
SiO2 |
Notes
Investigated how Ru co-reactant impacts Ta phase |
1340 |