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A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (9) G282-G284 (2006)
Date:
2006-05-11
Author Information
| Name | Institution |
|---|---|
| Jung-Dae Kwon | Korea Advanced Institute of Science and Technology |
| Jin-Seong Park | Samsung Display Co. |
| Han-Choon Lee | DongbuAnam Semiconductor |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Plasma Ta
Other TaNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Substrates
| SiO2 |
Notes
| 1163 |