Publication Information

Title: A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films

Type: Journal

Info: Electrochemical and Solid-State Letters, 9 (9) G282-G284 (2006)

Date: 2006-05-11

DOI: http://dx.doi.org/10.1149/1.2216593

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Samsung Display Co.

DongbuAnam Semiconductor

Korea Advanced Institute of Science and Technology

Films

Deposition Temperature = 350C

7783-71-3

1333-74-0

Deposition Temperature = 350C

7783-71-3

1333-74-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

1163



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