Publication Information

Title:
A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (9) G282-G284 (2006)
Date:
2006-05-11

Author Information

Name Institution
Jung-Dae KwonKorea Advanced Institute of Science and Technology
Jin-Seong ParkSamsung Display Co.
Han-Choon LeeDongbuAnam Semiconductor
Sang-Won KangKorea Advanced Institute of Science and Technology

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

1163