Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Type:
Journal
Info:
IEEE Transations on Electron Devices, vol. 62, no. 6, pp. 1870-1878, 2015
Date:
2015-05-07
DOI:
http://dx.doi.org/10.1109/TED.2015.2420690

Author Information

Name Institution
Shu YangHong Kong University of Science and Technology
Shenghou LiuHong Kong University of Science and Technology
Yunyou LuHong Kong University of Science and Technology
Cheng LiuHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Other Al2O3

Hardware used: Unknown
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Ar, Argon
CAS#: 7440-37-1
N2, Nitrogen
CAS#: 7727-37-9
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

416