AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
Type:
Journal
Info:
IEEE Transations on Electron Devices, vol. 62, no. 6, pp. 1870-1878, 2015
Date:
2015-05-07
Author Information
| Name | Institution |
|---|---|
| Shu Yang | Hong Kong University of Science and Technology |
| Shenghou Liu | Hong Kong University of Science and Technology |
| Yunyou Lu | Hong Kong University of Science and Technology |
| Cheng Liu | Hong Kong University of Science and Technology |
| Kevin J. Chen | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
Notes
| 416 |