Publication Information

Title: AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Type: Journal

Info: IEEE Transations on Electron Devices, vol. 62, no. 6, pp. 1870-1878, 2015

Date: 2015-05-07

DOI: http://dx.doi.org/10.1109/TED.2015.2420690

Author Information

Name

Institution

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Films

Other Al2O3 using Unknown

Deposition Temperature Range N/A

7664-41-7

7440-37-1

7727-37-9

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

416



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