Publication Information

Title:
AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
Type:
Journal
Info:
IEEE Transations on Electron Devices, vol. 62, no. 6, pp. 1870-1878, 2015
Date:
2015-05-07

Author Information

Name Institution
Shu YangHong Kong University of Science and Technology
Shenghou LiuHong Kong University of Science and Technology
Yunyou LuHong Kong University of Science and Technology
Cheng LiuHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Other Al2O3

Hardware used: Unknown

CAS#: 7664-41-7

CAS#: 7440-37-1

CAS#: 7727-37-9


CAS#: 7732-18-5

Film/Plasma Properties

Substrates

Keywords

Notes

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