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Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma
Type:
Journal
Info:
J. Phys. Commun. 4 (2020) 095013
Date:
2020-09-20
Author Information
| Name | Institution |
|---|---|
| Takeshi Kitajima | National Defense Academy |
| Hidemichi Minowa | National Defense Academy |
| Toshiki Nakano | National Defense Academy |
Films
Plasma HfO2
Hardware used: Custom Remote Inductively Coupled Plasma
CAS#: 352535-01-4
CAS#: 7440-37-1
CAS#: 7782-44-7
Plasma HfO2
Film/Plasma Properties
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Ion Flux
Analysis: Langmuir Probe
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| SiO2 |
Notes
| 1666 |