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Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma

Type:
Journal
Info:
J. Phys. Commun. 4 (2020) 095013
Date:
2020-09-20
DOI:
http://dx.doi.org/10.1088/2399-6528/abb4b6

Author Information

Name Institution
Takeshi KitajimaNational Defense Academy
Hidemichi MinowaNational Defense Academy
Toshiki NakanoNational Defense Academy

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Ar, Argon
CAS#: 7440-37-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics HR4000CG-UV-NIR

Characteristic: Ion Flux
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 1600 ESCA

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Omicron VT-AFM

Substrates

SiO2

Notes

1666