Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-12-09
Author Information
| Name | Institution |
|---|---|
| Taeyong Park | Hanyang University |
| Jaesang Lee | Hanyang University |
| Jingyu Park | Hanyang University |
| Heeyoung Jeon | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Ki-Hoon Lee | Wonik IPS Ltd. |
| Byung-Chul Cho | Wonik IPS Ltd. |
| Moo-Sung Kim | Air Products |
| Heui-Bok Ahn | Air Products |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Adhesion
Analysis: Tape Test
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Surface Polarity
Analysis: Sessile Drop Tests
Substrates
| SiO2 |
Notes
| Testing impact of Ar plasma on Ru process and material properties. |
| In situ AES produces interesting atomic % depth profiles of substrate and Ru materials as Ru nucleates and completes coverage of SiO2. |
| 69 |