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Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-12-09
DOI:
http://dx.doi.org/10.1116/1.3666033

Author Information

Name Institution
Taeyong ParkHanyang University
Jaesang LeeHanyang University
Jingyu ParkHanyang University
Heeyoung JeonHanyang University
Hyeongtag JeonHanyang University
Ki-Hoon LeeWonik IPS Ltd.
Byung-Chul ChoWonik IPS Ltd.
Moo-Sung KimAir Products
Heui-Bok AhnAir Products

Films

Plasma Ru

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Surface Polarity
Analysis: Sessile Drop Tests
Diagnostic: -

Substrates

SiO2

Notes

Testing impact of Ar plasma on Ru process and material properties.
In situ AES produces interesting atomic % depth profiles of substrate and Ru materials as Ru nucleates and completes coverage of SiO2.
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