Publication Information

Title:
Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-12-09

Author Information

Name Institution
Taeyong ParkHanyang University
Jaesang LeeHanyang University
Jingyu ParkHanyang University
Heeyoung JeonHanyang University
Hyeongtag JeonHanyang University
Ki-Hoon LeeWonik IPS Ltd.
Byung-Chul ChoWonik IPS Ltd.
Moo-Sung KimAir Products
Heui-Bok AhnAir Products

Films

Plasma Ru


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Adhesion
Analysis: Tape Test

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Surface Polarity
Analysis: Sessile Drop Tests

Substrates

SiO2

Keywords

DRAM Electrode

Notes

Testing impact of Ar plasma on Ru process and material properties.
In situ AES produces interesting atomic % depth profiles of substrate and Ru materials as Ru nucleates and completes coverage of SiO2.
69