Publication Information

Title:
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Materials 2019, 12, 406
Date:
2019-01-22

Author Information

Name Institution
Heli SeppänenAalto University
Iurii KimAalto University
Jarkko EtulaAalto University
Evgeniy UbyivovkITMO University
Alexei D. BouravleuvAalto University
Harri LipsanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500


CAS#: 7664-41-7

CAS#: 7440-37-1

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Substrates

Si(100)
Si(111)

Keywords

Notes

1247