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Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Materials 2019, 12, 406
Date:
2019-01-22
DOI:
http://dx.doi.org/10.3390/ma12030406

Author Information

Name Institution
Heli SeppänenAalto University
Iurii KimAalto University
Jarkko EtulaAalto University
Evgeniy UbyivovkITMO University
Alexei D. BouravleuvAalto University
Harri LipsanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Substrates

Si(100)
Si(111)

Notes

1247