Publication Information

Title: Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: Materials 2019, 12, 406

Date: 2019-01-22

DOI: http://dx.doi.org/10.3390/ma12030406

Author Information

Name

Institution

Aalto University

Aalto University

Aalto University

ITMO University

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature = 300C

75-24-1

7664-41-7

7440-37-1

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Plasmos SD 2300

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Thickness

XRR, X-Ray Reflectivity

Rigaku Smartlab

Density

XRR, X-Ray Reflectivity

Rigaku Smartlab

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

Rigaku Smartlab

Substrates

Si(100)

Si(111)

Keywords

Notes

1247



Shortcuts



© 2014-2019 plasma-ald.com