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Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Materials 2019, 12, 406
Date:
2019-01-22
Author Information
| Name | Institution |
|---|---|
| Heli Seppänen | Aalto University |
| Iurii Kim | Aalto University |
| Jarkko Etula | Aalto University |
| Evgeniy Ubyivovk | ITMO University |
| Alexei D. Bouravleuv | Aalto University |
| Harri Lipsanen | Aalto University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Substrates
| Si(100) |
| Si(111) |
Notes
| 1247 |