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Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films

Type:
Journal
Info:
Journal of Crystal Growth 572 (2021) 126264
Date:
2021-07-21
DOI:
https://doi.org/10.1016/j.jcrysgro.2021.126264

Author Information

Name Institution
Liangge XuHarbin Institute of Technology
Zhibo ZhangHarbin Institute of Technology
Lei YangHarbin Institute of Technology
Jinye YangHarbin Institute of Technology
Peng WangHarbin Institute of Technology
Gang GaoHarbin Institute of Technology
Chunqiang SunHarbin Institute of Technology
Victor RalchenkoHarbin Institute of Technology
Jiaqi ZhuHarbin Institute of Technology

Films

Thermal SnO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMASn, (Me2N)4Sn, [(CH3)2N]4Sn, Tetrakis(DiMethylAmido) Tin, Tin Dimethylamide
CAS#: 1066-77-9
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 50-250C

Plasma SnO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMASn, (Me2N)4Sn, [(CH3)2N]4Sn, Tetrakis(DiMethylAmido) Tin, Tin Dimethylamide
CAS#: 1066-77-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-250C

Plasma SnO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMASn, (Me2N)4Sn, [(CH3)2N]4Sn, Tetrakis(DiMethylAmido) Tin, Tin Dimethylamide
CAS#: 1066-77-9
O2, Oxygen
CAS#: 7782-44-7
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature Range = 50-250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Supra 55

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Talos F200X

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Talos F200X

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-3000

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-3000

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-3000

Characteristic: Surface Potential
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension 5

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: SuPro Instruments FST2000

Substrates

Silicon
Sapphire

Notes

1619