Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
Type:
Journal
Info:
Journal of Crystal Growth 572 (2021) 126264
Date:
2021-07-21
Author Information
| Name | Institution |
|---|---|
| Liangge Xu | Harbin Institute of Technology |
| Zhibo Zhang | Harbin Institute of Technology |
| Lei Yang | Harbin Institute of Technology |
| Jinye Yang | Harbin Institute of Technology |
| Peng Wang | Harbin Institute of Technology |
| Gang Gao | Harbin Institute of Technology |
| Chunqiang Sun | Harbin Institute of Technology |
| Victor Ralchenko | Harbin Institute of Technology |
| Jiaqi Zhu | Harbin Institute of Technology |
Films
Thermal SnO2
Plasma SnO2
Plasma SnO2
Hardware used: Custom Remote Inductively Coupled Plasma
CAS#: 1066-77-9
CAS#: 7782-44-7
CAS#: 7440-37-1
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Carrier Concentration
Analysis: Hall Measurements
Characteristic: Mobility
Analysis: Hall Measurements
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Surface Potential
Analysis: AFM, Atomic Force Microscopy
Characteristic: Stress
Analysis: Wafer Curvature
Substrates
| Silicon |
| Sapphire |
Notes
| 1619 |