Publication Information

Title: Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells

Type: Journal

Info: Applied Physics A 2015, Volume 120, Issue 3, pp 811-816

Date: 2015-06-05

DOI: http://dx.doi.org/10.1007/s00339-015-9280-3

Author Information

Name

Institution

Martin Luther University

Helmholtz-Zentrum Berlin für Materialien und Energie GmbH

Fraunhofer Center for Silicon Photovoltaics CSP

Martin Luther University

Martin Luther University

Helmholtz-Zentrum Berlin für Materialien und Energie GmbH

Martin Luther University

Films

Deposition Temperature = 180C

923956-62-1

7782-44-7

Deposition Temperature = 180C

923956-62-1

7782-44-7

7440-37-1

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Minority Carrier Lifetime

Photoconductance

Sinton WCT-100

Electrical Properties

Bright I-V

Class C Sun Simulator

Substrates

Silicon

Keywords

Notes

376



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