Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells

Type:
Journal
Info:
Applied Physics A 2015, Volume 120, Issue 3, pp 811-816
Date:
2015-06-05
DOI:
http://dx.doi.org/10.1007/s00339-015-9280-3

Author Information

Name Institution
Johannes ZieglerMartin Luther University
Mathias MewsHelmholtz-Zentrum Berlin für Materialien und Energie GmbH
Kai KaufmannFraunhofer Center for Silicon Photovoltaics CSP
Thomas SchneiderMartin Luther University
Alexander N. SprafkeMartin Luther University
Lars KorteHelmholtz-Zentrum Berlin für Materialien und Energie GmbH
Ralf B. WehrspohnMartin Luther University

Films

Plasma MoOx

Hardware used: Oxford Instruments FlexAL
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 180C

Plasma MoOx

Hardware used: Oxford Instruments FlexAL
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 180C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Electrical Properties
Analysis: Bright I-V
Diagnostic: Class C Sun Simulator

Substrates

Silicon

Notes

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