Publication Information

Title:
A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 277-280
Date:
2015-04-10

Author Information

Name Institution
S. J. ChoUniversity of Glasgow
J. W. RobertsUniversity of Liverpool
I. GuineyUniversity of Cambridge
X. LiUniversity of Glasgow
G. TernentUniversity of Glasgow
K. FlorosUniversity of Glasgow
C. J. HumphreysUniversity of Cambridge
Paul R. ChalkerUniversity of Liverpool
I. G. ThayneUniversity of Glasgow

Films

Other Al2O3

Hardware used: Unknown


CAS#: 7732-18-5

CAS#: 7440-37-1

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: I-V, Current-Voltage Measurements

Substrates

Keywords

Notes

Ar plasma treatment of GaN surface prior to thermal Al2O3 results in improved MOSCAP properties.
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