A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 277-280
Date:
2015-04-10
DOI:
http://dx.doi.org/10.1016/j.mee.2015.04.067

Author Information

Name Institution
S. J. ChoUniversity of Glasgow
Joseph W. RobertsUniversity of Liverpool
I. GuineyUniversity of Cambridge
X. LiUniversity of Glasgow
G. TernentUniversity of Glasgow
K. FlorosUniversity of Glasgow
C. J. HumphreysUniversity of Cambridge
Paul R. ChalkerUniversity of Liverpool
I. G. ThayneUniversity of Glasgow

Films

Other Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface State Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Notes

Ar plasma treatment of GaN surface prior to thermal Al2O3 results in improved MOSCAP properties.
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