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Publication Information

Title: A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

Type: Journal

Info: Microelectronic Engineering 147 (2015) 277-280

Date: 2015-04-10

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.067

Author Information

Name

Institution

University of Glasgow

University of Liverpool

University of Cambridge

University of Glasgow

University of Glasgow

University of Glasgow

University of Cambridge

University of Liverpool

University of Glasgow

Films

Other Al2O3 using Unknown

Deposition Temperature = 200C

75-24-1

7732-18-5

7440-37-1

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Frequency Dispersion

C-V, Capacitance-Voltage Measurements

Unknown

Interface State Density

I-V, Current-Voltage Measurements

Unknown

Substrates

Keywords

Notes

Ar plasma treatment of GaN surface prior to thermal Al2O3 results in improved MOSCAP properties.

313


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