Name

Institution

Rafaiel A. Ovanesyan

Colorado School of Mines

Dennis M. Hausmann

Lam Research Corporation

Sumit Agarwal

Colorado School of Mines

Plasma SiN_x using Custom Direct Plasma

Deposition Temperature = 475C

DMDCS, Dimethyldichlorosilane, Si(CH₃)₂Cl₂

75-78-5

NH₃, Ammonia

7664-41-7

Thermal SiN_x using Custom

Deposition Temperature = 400C

DMDCS, Dimethyldichlorosilane, Si(CH₃)₂Cl₂

75-78-5

TMA, AlMe₃, Trimethyl Aluminum

75-24-1

Where to buy precursor

Other SiN_x using Custom Direct Plasma

Deposition Temperature = 320C

Hexachlorodisilane, Si2Cl6

13465-77-5

Where to buy precursor

TMA, AlMe₃, Trimethyl Aluminum

75-24-1

Where to buy precursor

NH₃, Ammonia

7664-41-7

Ar, Argon

7440-37-1

Plasma SiO₂ using Custom Direct Plasma

Deposition Temperature = 400C

Hexachlorodisilane, Si2Cl6

13465-77-5

Where to buy precursor

Carbon Monoxide, CO

630-08-0

Plasma SiO₂ using Custom Direct Plasma

Deposition Temperature = 400C

Hexachlorodisilane, Si2Cl6

13465-77-5

Where to buy precursor

Carbon Monoxide, CO

630-08-0

O₂, Oxygen

7782-44-7

Characteristic

Analysis

Diagnostic

Surface Reactions

ATR-FTIR

Nicolet 6700

Si₃N₄

Silicon

SiO_xN_y

848