Publication Information

Title: Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics

Type: Journal

Info: Journal of Vacuum Science & Technology A 35, 021506 (2017)

Date: 2016-12-22

DOI: http://dx.doi.org/10.1116/1.4973923

Author Information

Name

Institution

Colorado School of Mines

Lam Research Corporation

Colorado School of Mines

Films

Deposition Temperature = 475C

75-78-5

7664-41-7

Thermal SiNx using Custom

Deposition Temperature = 400C

75-78-5

75-24-1

Deposition Temperature = 320C

13465-77-5

75-24-1

7664-41-7

7440-37-1

Deposition Temperature = 400C

13465-77-5

630-08-0

Deposition Temperature = 400C

13465-77-5

630-08-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Surface Reactions

ATR-FTIR

Nicolet 6700

Substrates

Si3N4

Silicon

SiOxNy

Keywords

Notes

848



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