Sub-nanometer heating depth of atomic layer annealing
Type:
Journal
Info:
Applied Surface Science 525 (2020) 146615
Date:
2020-05-05
Author Information
| Name | Institution |
|---|---|
| Wei-Hao Lee | National Taiwan University |
| Wei-Chung Kao | National Taiwan University |
| Yu-Tung Yin | National Taiwan University |
| Sheng-Han Yi | National Taiwan University |
| Kuei-Wen Huang | National Taiwan University |
| Hsin-Chih Lin | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma AlN
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Sapphire |
| Pt |
| GaN |
| Si(100) |
Notes
| 1632 |