Publication Information

Title:
Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 735, 2018, Pages 1181 - 1188
Date:
2017-11-23

Author Information

Name Institution
Boncheol KuHanyang University
Yawar AbbasHanyang University
Andrey Sergeevich SokolovHanyang University
Changhwan ChoiHanyang University

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Pt

Keywords

Plasma vs Thermal Comparison
Resistance RAM

Notes

1481