Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 735, 2018, Pages 1181 - 1188
Date:
2017-11-23
DOI:
https://doi.org/10.1016/j.jallcom.2017.11.267

Author Information

Name Institution
Boncheol KuHanyang University
Yawar AbbasHanyang University
Andrey Sergeevich SokolovHanyang University
Changhwan ChoiHanyang University

Films

Thermal HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Other HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Nanoview MG-1000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Substrates

Pt

Notes

1481