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Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 735, 2018, Pages 1181 - 1188
Date:
2017-11-23
Author Information
| Name | Institution |
|---|---|
| Boncheol Ku | Hanyang University |
| Yawar Abbas | Hanyang University |
| Andrey Sergeevich Sokolov | Hanyang University |
| Changhwan Choi | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Pt |
Notes
| 1481 |