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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Carbon content control of silicon oxycarbide film with methane containing plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 062401 (2020)
Date:
2020-08-21
Author Information
| Name | Institution |
|---|---|
| Seokhwi Song | Hanyang University |
| Suhyeon Park | Hanyang University |
| Chanwon Jung | Hanyang University |
| Hyunwoo Park | Hanyang University |
| Youngjoon Kim | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma SiCOH
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Keywords
Notes
| 1509 |