Carbon content control of silicon oxycarbide film with methane containing plasma

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 062401 (2020)
Date:
2020-08-21
DOI:
http://dx.doi.org/10.1116/6.0000210

Author Information

Name Institution
Seokhwi SongHanyang University
Suhyeon ParkHanyang University
Chanwon JungHanyang University
Hyunwoo ParkHanyang University
Youngjoon KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma SiCOH

Hardware used: Custom Direct Capacitively Coupled Plasma
OMCTS, (CH3)2SiO-)4, OctaMethylCycloTetraSiloxane
CAS#: 556-67-2
Ar, Argon
CAS#: 7440-37-1
CH4, Methane
CAS#: 74-82-8
Where to buy precursor
Deposition Temperature Range = 200-600C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

1509