Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes

Type:
Journal
Info:
Materials Letters, Volume 59, Pages 615 - 617
Date:
2004-09-21
DOI:
https://doi.org/10.1016/j.matlet.2004.09.030

Author Information

Name Institution
Yong Ju LeeLawrence Berkeley National Laboratory

Films

Other TiN

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
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NH3, Ammonia
CAS#: 7664-41-7
Ar, Argon
CAS#: 7440-37-1
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 180C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

SiO2

Notes

1256