Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements

Type:
Journal
Info:
Microelectronic Engineering 88 (2011) 641 - 645
Date:
2010-06-15
DOI:
https://doi.org/10.1016/j.mee.2010.06.034

Author Information

Name Institution
H. WojcikTechnische Universität Dresden
U. MerkelTechnische Universität Dresden
A. JahnTechnische Universität Dresden
K. RichterTechnische Universität Dresden
Marcel JunigeTechnische Universität Dresden
C. KleinGlobal Foundries
J. GluchLeibniz Institute for Solid State and Materials Research
Matthias AlbertTechnische Universität Dresden
F. MunnikForschungszentrum Rossendorf
Christian WenzelTechnische Universität Dresden
Johann W. BarthaTechnische Universität Dresden

Films

Plasma RuC

Hardware used: Unknown
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
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H2, Hydrogen
CAS#: 1333-74-0

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N2, Nitrogen
CAS#: 7727-37-9
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Philips X'Pert MPD Diffactometer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 237 SMU

Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 237 SMU

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Substrates

SiO2

Notes

1443