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Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
Type:
Journal
Info:
Microelectronic Engineering 88 (2011) 641 - 645
Date:
2010-06-15
Author Information
| Name | Institution |
|---|---|
| H. Wojcik | Technische Universität Dresden |
| U. Merkel | Technische Universität Dresden |
| A. Jahn | Technische Universität Dresden |
| K. Richter | Technische Universität Dresden |
| Marcel Junige | Technische Universität Dresden |
| C. Klein | Global Foundries |
| J. Gluch | Leibniz Institute for Solid State and Materials Research |
| Matthias Albert | Technische Universität Dresden |
| F. Munnik | Forschungszentrum Rossendorf |
| Christian Wenzel | Technische Universität Dresden |
| Johann W. Bartha | Technische Universität Dresden |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| SiO2 |
Notes
| 1443 |