Publication Information

Title:
Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
Type:
Journal
Info:
Microelectronic Engineering 88 (2011) 641 - 645
Date:
2010-06-15

Author Information

Name Institution
H. WojcikTechnische Universität Dresden
U. MerkelTechnische Universität Dresden
A. JahnTechnische Universität Dresden
K. RichterTechnische Universität Dresden
Marcel JunigeTechnische Universität Dresden
C. KleinGlobal Foundries
J. GluchLeibniz Institute for Solid State and Materials Research
Matthias AlbertTechnische Universität Dresden
F. MunnikForschungszentrum Rossendorf
Christian WenzelTechnische Universität Dresden
Johann W. BarthaTechnische Universität Dresden

Films

Plasma RuC


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

1443