The publication database currently has 1673 entries.
Use Advanced Search for more complex searches
Recent Database Additions
Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
Type:
Journal
Info:
Applied Physics Letters 92, 202902 (2008)
Date:
2008-04-16
Author Information
| Name | Institution |
|---|---|
| Tae Joo Park | Seoul National University |
| Jeong Hwan Kim | Seoul National University |
| Jae Hyuck Jang | Seoul National University |
| Kwang Duk Na | Seoul National University |
| Cheol Seong Hwang | Seoul National University |
| Gee-Man Kim | Quros. Co., Ltd. |
| Kang Joon Choi | Quros. Co., Ltd. |
| Jae Hak Jeong | Quros. Co., Ltd. |
Films
Plasma TaCN
Plasma TaCN
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Substrates
| HfO2 |
| SiO2 |
Keywords
| Wet Etch Rate |
Notes
| 1336 |