Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films

Type:
Journal
Info:
Applied Physics Letters 92, 202902 (2008)
Date:
2008-04-16
DOI:
http://dx.doi.org/10.1063/1.2921785

Author Information

Name Institution
Tae Joo ParkSeoul National University
Jeong Hwan KimSeoul National University
Jae Hyuck JangSeoul National University
Kwang Duk NaSeoul National University
Cheol Seong HwangSeoul National University
Gee-Man KimQuros. Co., Ltd.
Kang Joon ChoiQuros. Co., Ltd.
Jae Hak JeongQuros. Co., Ltd.

Films

Plasma TaCN

Hardware used: Quros Plus 200
t-Amylimidotris(dimethylamido)tantalum(V), (NtAm)(NMe2)3Ta, TAIMATA
CAS#: 629654-53-1
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 350C

Plasma TaCN

Hardware used: Quros Plus 200
t-Amylimidotris(dimethylamido)tantalum(V), (NtAm)(NMe2)3Ta, TAIMATA
CAS#: 629654-53-1
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Substrates

HfO2
SiO2

Notes

1336