Publication Information

Title:
Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
Type:
Journal
Info:
Applied Physics Letters 92, 202902 (2008)
Date:
2008-04-16

Author Information

Name Institution
Tae Joo ParkSeoul National University
Jeong Hwan KimSeoul National University
Jae Hyuck JangSeoul National University
Kwang Duk NaSeoul National University
Cheol Seong HwangSeoul National University
Gee-Man KimQuros. Co., Ltd.
Kang Joon ChoiQuros. Co., Ltd.
Jae Hak JeongQuros. Co., Ltd.

Films



Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Substrates

HfO2
SiO2

Keywords

Wet Etch Rate

Notes

1336