
Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
Type:
Journal
Info:
Applied Physics Letters 92, 202902 (2008)
Date:
2008-04-16
Author Information
Name | Institution |
---|---|
Tae Joo Park | Seoul National University |
Jeong Hwan Kim | Seoul National University |
Jae Hyuck Jang | Seoul National University |
Kwang Duk Na | Seoul National University |
Cheol Seong Hwang | Seoul National University |
Gee-Man Kim | Quros. Co., Ltd. |
Kang Joon Choi | Quros. Co., Ltd. |
Jae Hak Jeong | Quros. Co., Ltd. |
Films
Plasma TaCN
Plasma TaCN
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Substrates
HfO2 |
SiO2 |
Notes
1336 |