Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma

Type:
Journal
Info:
Applied Physics Letters 91, 252106 (2007)
Date:
2007-11-27
DOI:
http://dx.doi.org/10.1063/1.2825272

Author Information

Name Institution
Tae Joo ParkSeoul National University
Jeong Hwan KimSeoul National University
Jae Hyuck JangSeoul National University
Kwang Duk NaSeoul National University
Cheol Seong HwangSeoul National University
Jong Hoon KimQuros. Co., Ltd.
Gee-Man KimQuros. Co., Ltd.
Jae Ho ChoiQuros. Co., Ltd.
Kang Joon ChoiQuros. Co., Ltd.
Jae Hak JeongQuros. Co., Ltd.

Films

Plasma TaCN

Hardware used: Quros Plus 200
t-Amylimidotris(dimethylamido)tantalum(V), (NtAm)(NMe2)3Ta, TAIMATA
CAS#: 629654-53-1
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

SiO2

Notes

1325