Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma

Type:
Journal
Info:
Applied Physics Letters 91, 252106 (2007)
Date:
2007-11-27

Author Information

Name Institution
Tae Joo ParkSeoul National University
Jeong Hwan KimSeoul National University
Jae Hyuck JangSeoul National University
Kwang Duk NaSeoul National University
Cheol Seong HwangSeoul National University
Jong Hoon KimQuros. Co., Ltd.
Gee-Man KimQuros. Co., Ltd.
Jae Ho ChoiQuros. Co., Ltd.
Kang Joon ChoiQuros. Co., Ltd.
Jae Hak JeongQuros. Co., Ltd.

Films


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

SiO2

Notes

1325