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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure

Type:
Journal
Info:
J. Mater. Chem. C, 2014, 2, 7570
Date:
2014-07-11
DOI:
http://dx.doi.org/10.1039/c4tc00849a

Author Information

Name Institution
Yijun ZhangXi'an Jiaotong University
Wei RenXi'an Jiaotong University
Zhuangde JiangXi'an Jiaotong University
Shuming YangXi'an Jiaotong University
Weixuan JingXi'an Jiaotong University
Peng ShiXi'an Jiaotong University
Xiaoqing WuXi'an Jiaotong University
Zuo-Guang YeXi'an Jiaotong University

Films

Plasma Graphene

Hardware used: Picosun R200
Benzene, C6H6
CAS#: 71-43-2
H2, Hydrogen
CAS#: 1333-74-0

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Ar, Argon
CAS#: 7440-37-1
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan G2

Characteristic: Thickness
Analysis: Raman Spectroscopy
Diagnostic: Horiba Jobin Yvon R800

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Diagnostic: FEI Titan G2

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL 2100

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Quanta 250 FEG

Substrates

Cu

Notes

112