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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure

Type:
Journal
Info:
J. Mater. Chem. C, 2014, 2, 7570
Date:
2014-07-11

Author Information

Name Institution
Yijun ZhangXi'an Jiaotong University
Wei RenXi'an Jiaotong University
Zhuangde JiangXi'an Jiaotong University
Shuming YangXi'an Jiaotong University
Weixuan JingXi'an Jiaotong University
Peng ShiXi'an Jiaotong University
Xiaoqing WuXi'an Jiaotong University
Zuo-Guang YeXi'an Jiaotong University

Films

Plasma Graphene

Hardware used: Picosun R200

CAS#: 71-43-2

CAS#: 1333-74-0

CAS#: 7440-37-1

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Raman Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Substrates

Cu

Notes

112