Publication Information

Title:
A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 14 (7) H271-H273 (2011)
Date:
2011-03-18

Author Information

Name Institution
A. CacciatoIMEC
L. BreuilIMEC
H. DekkerIMEC
M. ZahidIMEC
G. S. KarIMEC
J.L. EveraertIMEC
G. SchoofsIMEC
X. ShiIMEC
G. Van den boschIMEC
M. JurczakIMEC
I. DebusschereIMEC
J. Van HoudtIMEC
Andrew CockburnApplied Materials
Lucien DateApplied Materials
Li-Qun XaApplied Materials
Maggie LeApplied Materials
Won LeeApplied Materials

Films

Plasma SiO2

Hardware used: Unknown


CAS#: 7440-59-7

CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: -

Characteristic: Refractive Index
Analysis: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Flat Band Voltage Shift
Analysis: Non-contact Corona C-V

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: Non-contact Corona C-V

Characteristic: Thickness
Analysis: Non-contact Corona C-V

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

Notes

1362