Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 30, 051807 (2012)
Date:
2012-08-23
DOI:
http://dx.doi.org/10.1116/1.4752089

Author Information

Name Institution
Chiyu ZhuArizona State University
David J. SmithArizona State University
Robert J. NemanichArizona State University

Films

Plasma ZnO

Hardware used: Custom Remote Inductively Coupled Plasma
DMZ, DiMethylZinc, ZnMe2, Zn(CH3)2
CAS#: 544-97-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 175C

Plasma HfLaOx

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 175C

Plasma ZnO

Hardware used: Custom Remote Inductively Coupled Plasma
DMZ, DiMethylZinc, ZnMe2, Zn(CH3)2
CAS#: 544-97-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
He, Helium
CAS#: 7440-59-7
Deposition Temperature = 175C

Plasma HfLaOx

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
He, Helium
CAS#: 7440-59-7
Deposition Temperature = 175C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Microtech Clam II

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Microtech Clam II

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VSW HAC 300

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)

Notes

631