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Publication Information

Title: Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition

Type: Journal

Info: Journal of Vacuum Science & Technology B 30, 051807 (2012)

Date: 2012-08-23

DOI: http://dx.doi.org/10.1116/1.4752089

Author Information

Name

Institution

Arizona State University

Arizona State University

Arizona State University

Films

Plasma ZnO using Custom ICP

Deposition Temperature = 175C

544-97-8

7782-44-7

Plasma HfLaOx using Custom ICP

Deposition Temperature = 175C

352535-01-4

68959-87-5

7782-44-7

Plasma ZnO using Custom ICP

Deposition Temperature = 175C

544-97-8

7782-44-7

7440-59-7

Plasma HfLaOx using Custom ICP

Deposition Temperature = 175C

352535-01-4

68959-87-5

7782-44-7

7440-59-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Microtech Clam II

Bonding States

XPS, X-ray Photoelectron Spectroscopy

VG Microtech Clam II

Valence Band

XPS, X-ray Photoelectron Spectroscopy

VSW HAC 300

Images

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Substrates

Si(100)

Keywords

Notes

631



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