Publication Information

Title:
Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 177 - 182
Date:
1992-06-02

Author Information

Name Institution
A. MahajanUniversity of Texas at Austin
J. IrbyUniversity of Texas at Austin
D. KinoskyUniversity of Texas at Austin
R. QianUniversity of Texas at Austin
S. ThomasUniversity of Texas at Austin
Sourish BanerjeeUniversity of Texas at Austin
A. TaschUniversity of Texas at Austin
T. PicrauxSandia National Laboratories

Films

Plasma Si


CAS#: 1590-87-0

CAS#: 7440-59-7

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction

Characteristic: Ion Flux
Analysis: Langmuir Probe

Characteristic: Plasma Potential
Analysis: Langmuir Probe

Substrates

Si(100)

Keywords

Notes

1408