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Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 177 - 182
Date:
1992-06-02
Author Information
| Name | Institution |
|---|---|
| A. Mahajan | University of Texas at Austin |
| J. Irby | University of Texas at Austin |
| D. Kinosky | University of Texas at Austin |
| R. Qian | University of Texas at Austin |
| S. Thomas | University of Texas at Austin |
| Sourish Banerjee | University of Texas at Austin |
| A. Tasch | University of Texas at Austin |
| T. Picraux | Sandia National Laboratories |
Films
Plasma Si
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Characteristic: Ion Flux
Analysis: Langmuir Probe
Characteristic: Plasma Potential
Analysis: Langmuir Probe
Substrates
| Si(100) |
Notes
| 1408 |