Publication Information

Title: Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films

Type: Journal

Info: Thin Solid Films 517 (2009) 3900 - 3903

Date: 2009-02-07

DOI: http://dx.doi.org/10.1016/j.tsf.2009.01.159

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma HfLaOx using Custom ECR

Deposition Temperature Range = 150-350C

352535-01-4

68959-87-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Thickness

Ellipsometry

Rudolf AutoEL II

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Substrates

Silicon

Keywords

High-k Dielectric Thin Films

Notes

739



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