Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films

Type:
Journal
Info:
Thin Solid Films 517 (2009) 3900 - 3903
Date:
2009-02-07

Author Information

Name Institution
Woong-Sun KimHanyang University
Sang-Kyun ParkHanyang University
Dae-Young MoonHanyang University
Byoung-Woo KangHanyang University
Heon-Do KimHanyang University
Jong-Wan ParkHanyang University

Films


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Keywords

High-k Dielectric Thin Films

Notes

739