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Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films

Type:
Journal
Info:
Thin Solid Films 517 (2009) 3900 - 3903
Date:
2009-02-07
DOI:
http://dx.doi.org/10.1016/j.tsf.2009.01.159

Author Information

Name Institution
Woong-Sun KimHanyang University
Sang-Kyun ParkHanyang University
Dae-Young MoonHanyang University
Byoung-Woo KangHanyang University
Heon-Do KimHanyang University
Jong-Wan ParkHanyang University

Films

Plasma HfLaOx

Hardware used: Custom ECR
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

739