The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD

Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (4) H479-H482 (2010)
Date:
2010-01-07

Author Information

Name Institution
Hyungchul KimHanyang University
Sanghyun WooHanyang University
Jaesang LeeHanyang University
Honggyu KimHanyang University
Yongchan KimHanyang University
Hyerin LeeHanyang University
Hyeongtag JeonHanyang University

Films

Plasma La2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Notes

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