Publication Information

Title: The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD

Type: Journal

Info: Journal of The Electrochemical Society, 157 (4) H479-H482 (2010)

Date: 2010-01-07

DOI: http://dx.doi.org/10.1149/1.3301665

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma La2O3 using Custom Remote

Deposition Temperature = 300C

68959-87-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Thickness

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

-

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

Keywords

Notes

1353



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