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Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
Type:
Journal
Info:
J. Mater. Res., Vol. 25, No. 10, Oct 2010
Date:
2010-10-01
Author Information
| Name | Institution |
|---|---|
| Yongchan Kim | Hanyang University |
| Sanghyun Woo | Hanyang University |
| Hyungchul Kim | Hanyang University |
| Jaesang Lee | Hanyang University |
| Honggyu Kim | Hanyang University |
| Hyerin Lee | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma La2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Substrates
| Silicon |
Notes
| Substrates pirahna and HF cleaned |
| 22 |