Publication Information

Title: Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

Type: Journal

Info: Applied Physics Letters 96, 082905 (2010)

Date: 2010-01-25

DOI: http://dx.doi.org/10.1063/1.3330929

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Yonsei University

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Yonsei University

Yonsei University

Films

Plasma TiO2 using Custom

Deposition Temperature Range N/A

3275-24-9

7782-44-7

Plasma HfO2 using Custom

Deposition Temperature Range N/A

19962-11-9

7782-44-7

Plasma La2O3 using Custom

Deposition Temperature Range N/A

68959-87-5

7782-44-7

Plasma Al2O3 using Custom

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Unknown

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

Silicon

Keywords

Notes

724



Shortcuts



© 2014-2019 plasma-ald.com