Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
Type:
Journal
Info:
Applied Physics Letters 96, 082905 (2010)
Date:
2010-01-25
Author Information
Name | Institution |
---|---|
Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
Woo-Hee Kim | Pohang University of Science and Technology (POSTECH) |
Ja Hoon Koo | Yonsei University |
S. J. Lim | Pohang University of Science and Technology (POSTECH) |
Changsoo Lee | Pohang University of Science and Technology (POSTECH) |
Taeyoon Lee | Yonsei University |
Hyungjun Kim | Yonsei University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Substrates
Silicon |
Notes
724 |