Publication Information

Title:
Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
Type:
Journal
Info:
Applied Physics Letters 96, 082905 (2010)
Date:
2010-01-25

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Woo-Hee KimPohang University of Science and Technology (POSTECH)
Ja Hoon KooYonsei University
S. J. LimPohang University of Science and Technology (POSTECH)
Changsoo LeePohang University of Science and Technology (POSTECH)
Taeyoon LeeYonsei University
Hyungjun KimYonsei University

Films



Plasma La2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

Notes

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