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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
Type:
Journal
Info:
Chem. Mater. 2012, 24, 2099-2110
Date:
2012-04-28
Author Information
| Name | Institution |
|---|---|
| Taeyong Eom | Seoul National University |
| Seol Choi | Seoul National University |
| Byung Joon Choi | Seoul National University |
| Min Hwan Lee | University of California - Merced |
| Taehong Gwon | Seoul National University |
| Sang Ho Rha | Seoul National University |
| Woongkyu Lee | Seoul National University |
| Moo-Sung Kim | Air Products |
| Manchao Xiao | Air Products |
| Iain Buchanan | Air Products |
| Deok-Yong Cho | RWTH Aachen University |
| Cheol Seong Hwang | Seoul National University |
Films
Film/Plasma Properties
Substrates
| Si(100) |
| SiO2 |
| TiN |
| TiO2 |
Keywords
Notes
| 638 |