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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
Type:
Journal
Info:
Chem. Mater. 2012, 24, 2099-2110
Date:
2012-04-28
Author Information
| Name | Institution |
|---|---|
| Taeyong Eom | Seoul National University |
| Seol Choi | Seoul National University |
| Byung Joon Choi | Seoul National University |
| Min Hwan Lee | University of California - Merced |
| Taehong Gwon | Seoul National University |
| Sang Ho Rha | Seoul National University |
| Woongkyu Lee | Seoul National University |
| Moo-Sung Kim | Air Products |
| Manchao Xiao | Air Products |
| Iain Buchanan | Air Products |
| Deok-Yong Cho | RWTH Aachen University |
| Cheol Seong Hwang | Seoul National University |
Films
Film/Plasma Properties
Substrates
| Si(100) |
| SiO2 |
| TiN |
| TiO2 |
Notes
| 638 |