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Publication Information

Title: Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Type: Journal

Info: Chem. Mater. 2012, 24, 2099-2110

Date: 2012-04-28

DOI: http://dx.doi.org/10.1021/cm300539a

Author Information

Name

Institution

Taeyong Eom

Seoul National University

Seol Choi

Seoul National University

Byung Joon Choi

Seoul National University

Min Hwan Lee

University of California - Merced

Taehong Gwon

Seoul National University

Sang Ho Rha

Seoul National University

Woongkyu Lee

Seoul National University

Moo-Sung Kim

Air Products

Manchao Xiao

Air Products

Iain Buchanan

Air Products

Deok-Yong Cho

RWTH Aachen University

Cheol Seong Hwang

Seoul National University

Films

Plasma TiO2 using Unknown

Deposition Temperature = 250C

TTIP, Titanium(IV) i-propoxide

546-68-9

Where to buy precursor

Oxygen, O2

7782-44-7

Plasma TiN using Unknown

Deposition Temperature = 360C

Titanium Tetrachloride, TiCl4

7550-45-0

Where to buy precursor

Nitrogen, N2

7727-37-9

Hydrogen, H2

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Si(100)

SiO2

TiN

TiO2

Keywords

Notes

638


Mark Sowa

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