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Publication Information

Title: Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Type: Journal

Info: Chem. Mater. 2012, 24, 2099-2110

Date: 2012-04-28

DOI: http://dx.doi.org/10.1021/cm300539a

Author Information

Name

Institution

Seoul National University

Seoul National University

Seoul National University

University of California - Merced

Seoul National University

Seoul National University

Seoul National University

Air Products

Air Products

Air Products

RWTH Aachen University

Seoul National University

Films

Plasma TiO2 using Unknown

Deposition Temperature = 250C

546-68-9

7782-44-7

Plasma TiN using Unknown

Deposition Temperature = 360C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Si(100)

SiO2

TiN

TiO2

Keywords

Notes

638



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