Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Type:
Journal
Info:
Chem. Mater. 2012, 24, 2099-2110
Date:
2012-04-28
DOI:
http://dx.doi.org/10.1021/cm300539a

Author Information

Name Institution
Taeyong EomSeoul National University
Seol ChoiSeoul National University
Byung Joon ChoiSeoul National University
Min Hwan LeeUniversity of California - Merced
Taehong GwonSeoul National University
Sang Ho RhaSeoul National University
Woongkyu LeeSeoul National University
Moo-Sung KimAir Products
Manchao XiaoAir Products
Iain BuchananAir Products
Deok-Yong ChoRWTH Aachen University
Cheol Seong HwangSeoul National University

Films

Plasma TiO2

Hardware used: Unknown
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TiN

Hardware used: Unknown
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 360C

Film/Plasma Properties

Substrates

Si(100)
SiO2
TiN
TiO2

Notes

638