New materials for memristive switching

Type:
Journal
Info:
2014 IEEE International Symposium on Circuits and Systems (ISCAS)
Date:
2014-06-01
DOI:
http://dx.doi.org/10.1109/ISCAS.2014.6865757

Author Information

Name Institution
Byung Joon ChoiHewlett-Packard

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Plasma TiN

Hardware used: Unknown
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 350C

Film/Plasma Properties

Substrates

Notes

PEALD AlN and TiN for memristor application.
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