Publication Information

Title:
New materials for memristive switching
Type:
Journal
Info:
2014 IEEE International Symposium on Circuits and Systems (ISCAS)
Date:
2014-06-01

Author Information

Name Institution
Byung Joon ChoiHewlett-Packard

Films

Plasma AlN


Plasma TiN


Film/Plasma Properties

Substrates

Keywords

Resistance RAM

Notes

PEALD AlN and TiN for memristor application.
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