Publication Information

Title: New materials for memristive switching

Type: Journal

Info: 2014 IEEE International Symposium on Circuits and Systems (ISCAS)

Date: 2014-06-01

DOI: http://dx.doi.org/10.1109/ISCAS.2014.6865757

Author Information

Name

Institution

Hewlett-Packard

Films

Plasma AlN using Unknown

Deposition Temperature Range N/A

75-24-1

7727-37-9

1333-74-0

Plasma TiN using Unknown

Deposition Temperature = 350C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Resistance RAM

Notes

PEALD AlN and TiN for memristor application.

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