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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal

Type:
Journal
Info:
Annalen der Physik, Volume 529, Issue 11, 2017, Pages 1600410
Date:
2017-07-05
DOI:
http://dx.doi.org/10.1002/andp.201600410

Author Information

Name Institution
Mehrdad ShayganApplied Micro and Optoelectronic (AMO) GmbH
Martin OttoApplied Micro and Optoelectronic (AMO) GmbH
Abhay A. SagadeApplied Micro and Optoelectronic (AMO) GmbH
Carlos A. ChavarinUniversity Duisburg-Essen
Gerd BacherUniversity Duisburg-Essen
Wolfgang MertinUniversity Duisburg-Essen
Daniel NeumaierApplied Micro and Optoelectronic (AMO) GmbH

Films

Plasma AlTixOy

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Silicon

Notes

1094