Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
Type:
Journal
Info:
Annalen der Physik, Volume 529, Issue 11, 2017, Pages 1600410
Date:
2017-07-05
Author Information
| Name | Institution |
|---|---|
| Mehrdad Shaygan | Applied Micro and Optoelectronic (AMO) GmbH |
| Martin Otto | Applied Micro and Optoelectronic (AMO) GmbH |
| Abhay A. Sagade | Applied Micro and Optoelectronic (AMO) GmbH |
| Carlos A. Chavarin | University Duisburg-Essen |
| Gerd Bacher | University Duisburg-Essen |
| Wolfgang Mertin | University Duisburg-Essen |
| Daniel Neumaier | Applied Micro and Optoelectronic (AMO) GmbH |
Films
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
Notes
| 1094 |