Publication Information

Title: Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal

Type: Journal

Info: Annalen der Physik, Volume 529, Issue 11, 2017, Pages 1600410

Date: 2017-07-05

DOI: http://dx.doi.org/10.1002/andp.201600410

Author Information

Name

Institution

Applied Micro and Optoelectronic (AMO) GmbH

Applied Micro and Optoelectronic (AMO) GmbH

Applied Micro and Optoelectronic (AMO) GmbH

University Duisburg-Essen

University Duisburg-Essen

University Duisburg-Essen

Applied Micro and Optoelectronic (AMO) GmbH

Films

Plasma AlTixOy using Unknown

Deposition Temperature = 300C

75-24-1

7550-45-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Transistor Characteristics

Transistor Characterization

-

Substrates

Silicon

Keywords

Notes

1094



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