Publication Information

Title:
Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 24, 1327-1332 (2006)
Date:
2006-03-29

Author Information

Name Institution
Jin-Seong ParkKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films


Plasma TiSiN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Substrates

SiO2

Keywords

Notes

1308