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Publication Information

Title: Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

Type: Journal

Info: Journal of Applied Physics 106, 114107 (2009)

Date: 2009-11-02

DOI: http://dx.doi.org/10.1063/1.3267299

Author Information

Name

Institution

Eindhoven University of Technology

NXP Semiconductors Research

Eindhoven University of Technology

NXP Semiconductors Research

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 350-400C

75-24-1

7782-44-7

Deposition Temperature Range = 350-400C

7550-45-0

1333-74-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Signatone

Images

TEM, Transmission Electron Microscope

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Barrier Height

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Breakdown Voltage Lifetime

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

Fixed Charge Density

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

Substrates

Si(100)

Keywords

Notes

750



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