Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

Type:
Journal
Info:
Journal of Applied Physics 106, 114107 (2009)
Date:
2009-11-02

Author Information

Name Institution
D. HoogelandEindhoven University of Technology
K. B. JineshNXP Semiconductors Research
Fred RoozeboomEindhoven University of Technology
W. F. A. BeslingNXP Semiconductors Research
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Plasma TiN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Notes

750