Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
Type:
Journal
Info:
Journal of Applied Physics 106, 114107 (2009)
Date:
2009-11-02
Author Information
| Name | Institution |
|---|---|
| D. Hoogeland | Eindhoven University of Technology |
| K. B. Jinesh | NXP Semiconductors Research |
| Fred Roozeboom | Eindhoven University of Technology |
| W. F. A. Besling | NXP Semiconductors Research |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Al2O3
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 750 |