Publication Information

Title:
In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
Type:
Journal
Info:
J. Phys. D: Appl. Phys. 51 445201 2018
Date:
2018-09-14

Author Information

Name Institution
Jin Woo ParkSungkyunkwan University
Myeong Gyoon ChaeHanyang University
Doo San KimSungkyunkwan University
Won Oh LeeSungkyunkwan University
Han Dock SongWonik IPS Ltd.
Changhwan ChoiHanyang University
Geun Young YeomSungkyunkwan University

Films


Plasma TiN


Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Contact Resistance
Analysis: TLM, Transmission Line Measurement

Substrates

Silicon
HfO2

Keywords

Notes

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