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Publication Information

Title: Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy

Type: Journal

Info: Journal of Alloys and Compounds, Volume 698, 2017, Pages 141 - 146

Date: 2016-12-18

DOI: https://doi.org/10.1016/j.jallcom.2016.12.238

Author Information

Name

Institution

Shenzhen University

Shenzhen University

Shanghai Institute of Microsystem and Information Technology

Shenzhen University

Shenzhen University

Shanghai Institute of Microsystem and Information Technology

Shenzhen University

National University Singapore

Films

Plasma TiO2 using Beneq TFS-200

Deposition Temperature = 200C

7550-45-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Notes

920



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