Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy

Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 698, 2017, Pages 141 - 146
Date:
2016-12-18
DOI:
https://doi.org/10.1016/j.jallcom.2016.12.238

Author Information

Name Institution
Xinke LiuShenzhen University
Le ChenShenzhen University
Qiang LiuShanghai Institute of Microsystem and Information Technology
Jiazhu HeShenzhen University
Kuilong LiShenzhen University
Wenjie YuShanghai Institute of Microsystem and Information Technology
Jin-Ping AoShenzhen University
Kah-Wee AngNational University Singapore

Films

Plasma TiO2

Hardware used: Beneq TFS-200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Silicon

Notes

920