Publication Information

Title: In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition

Type: Journal

Info: Journal of Applied Physics 100, 023534 (2006)

Date: 2006-05-11

DOI: http://dx.doi.org/10.1063/1.2214438

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma TiN using Custom ICP

Deposition Temperature Range = 100-400C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Resistivity, Sheet Resistance

Ellipsometry

J.A. Woollam M-2000U

Thickness

XRR, X-Ray Reflectivity

Unknown

Density

XRR, X-Ray Reflectivity

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Substrates

Si with native oxide

SiO2

Keywords

Notes

1310



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