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In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 100, 023534 (2006)
Date:
2006-05-11
Author Information
| Name | Institution |
|---|---|
| E. Langereis | Eindhoven University of Technology |
| S. B. S. Heil | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| Si with native oxide |
| SiO2 |
Notes
| 1310 |