Publication Information

Title:
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:135
Date:
2015-03-02

Author Information

Name Institution
Lai-Guo WangNanjing University
Xu QianNanjing University
Yanqiang CaoNanjing University
Zheng-Yi CaoNanjing University
Guo-Yong FangNanjing University
Aidong LiNanjing University
Di WuNanjing University

Films

Plasma TiN



Thermal Al2O3


Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

TiN

Keywords

Resistance RAM

Notes

Picosun SUNALE R200 PEALD TiN with thermal Al2O3 and HfO2 for resistive RAM study.
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