Publication Information

Title:
Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 20(3), May/Jun 2002
Date:
2002-02-15

Author Information

Name Institution
Hyungjun KimIBM
S. M. RossnagelIBM

Films

Plasma Ti


Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: QCM, Quartz Crystal Microbalance

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Substrates

Pt
Cu
Al
Silicon
Amorphous C

Keywords

Interconnect

Notes

Nice reaction kinetics discussion.
H2 plasma can etch Si or amorphous C.
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