Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration

Publication Information

Title: Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration

Type: Conference Proceedings

Info: 2010 IEEE International 3D Systems Integration Conference (3DIC)

Date: 2010-11-16

DOI: http://dx.doi.org/10.1109/3DIC.2010.5751434

Author Information

Name

Institution

RTI International

RTI International

RTI International

RTI International

Films

Plasma TiN using Unknown

Deposition Temperature = 250C

TDMATi, (Me₂N)₄Ti, [(CH₃)₂N]₄Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide

3275-24-9

Where to buy precursor

7727-37-9

Thermal TiN using Unknown

Deposition Temperature = 400C

TiCl₄, Titanium Tetrachloride

7550-45-0

Where to buy precursor

7664-41-7

Thermal Ru using Unknown

Deposition Temperature Range = 270-350C

Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)₂

32992-96-4

Where to buy precursor

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

Unknown

-

Resistivity, Sheet Resistance

Unknown

-

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Substrates

SiO₂

Keywords

Plasma vs Thermal Comparison

Notes

731

Shortcuts

Films

Deposition Hardware

Film and Plasma Characteristics

Multi-factor Search

ALD and PEALD Background

On-line PEALD Theses

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