Microwave properties of superconducting atomic-layer deposited TiN films

Type:
Journal
Info:
IEEE Transactions on Applied Superconductivity, (Volume:23, Issue:3)
Date:
2012-12-27

Author Information

Name Institution
P. C. J. J. CoumouDelft University of Technology
M. R. ZuiddamDelft University of Technology
E. F. C. DriessenDelft University of Technology
P. J. de VisserDelft University of Technology
J. J. A. BaselmansSRON National Institute for Space Research
T. M. KlapwijkDelft University of Technology

Films

Plasma TiN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Critical Temperature
Analysis: Hall Bar Structures

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Bar Structures

Characteristic: Hall Voltage
Analysis: Hall Bar Structures

Characteristic: Carrier Concentration
Analysis: Hall Bar Structures

Characteristic: Microwave Properties
Analysis: Quarter Wave Resonators

Substrates

Si with native oxide

Notes

Available with additional TEM analysis in Coumou Thesis.
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