Publication Information

Title:
Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
Type:
Journal
Info:
IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 1, NO. 11, NOVEMBER 2011
Date:
2011-10-20

Author Information

Name Institution
Mohamed SaadaouiDelft University of Technology
Henk van ZeijlDelft University of Technology
Wilhelmus H. A. WienDelft University of Technology
Hoa T. M. PhamDelft University of Technology
Cees KwakernaakDelft University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Frans C. VoogtNXP Semiconductors Research
Fred RoozeboomNXP Semiconductors Research
Pasqualina M. SarroDelft University of Technology

Films

Plasma TiN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement

Substrates

Silicon

Keywords

Diffusion Barrier
Seed Layer

Notes

1444