Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
Type:
Journal
Info:
IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 1, NO. 11, NOVEMBER 2011
Date:
2011-10-20
Author Information
| Name | Institution |
|---|---|
| Mohamed Saadaoui | Delft University of Technology |
| Henk van Zeijl | Delft University of Technology |
| Wilhelmus H. A. Wien | Delft University of Technology |
| Hoa T. M. Pham | Delft University of Technology |
| Cees Kwakernaak | Delft University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Frans C. Voogt | NXP Semiconductors Research |
| Fred Roozeboom | NXP Semiconductors Research |
| Pasqualina M. Sarro | Delft University of Technology |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Substrates
| Silicon |
Notes
| 1444 |