Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
Type:
Journal
Info:
IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 1, NO. 11, NOVEMBER 2011
Date:
2011-10-20
Author Information
Name | Institution |
---|---|
Mohamed Saadaoui | Delft University of Technology |
Henk van Zeijl | Delft University of Technology |
Wilhelmus H. A. Wien | Delft University of Technology |
Hoa T. M. Pham | Delft University of Technology |
Cees Kwakernaak | Delft University of Technology |
Harm C. M. Knoops | Eindhoven University of Technology |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
Frans C. Voogt | NXP Semiconductors Research |
Fred Roozeboom | NXP Semiconductors Research |
Pasqualina M. Sarro | Delft University of Technology |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Substrates
Silicon |
Notes
1444 |