Publication Information

Title:
Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
Type:
Journal
Info:
Mater. Res. Soc. Symp. Proc. Vol. 863
Date:
2005-06-01

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
E. LangereisEindhoven University of Technology
Fred RoozeboomPhilips
A. KemmerenPhilips
N. P. PhamDelft University of Technology
Pasqualina M. SarroDelft University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2

Keywords

Notes

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