Publication Information

Title: Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications

Type: Journal

Info: Mater. Res. Soc. Symp. Proc. Vol. 863

Date: 2005-06-01

DOI: http://dx.doi.org/10.1557/PROC-863-B6.4

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Philips

Philips

Delft University of Technology

Delft University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma TiN using Custom ICP

Deposition Temperature Range = 100-400C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Resistivity, Sheet Resistance

Ellipsometry

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Substrates

SiO2

Keywords

Notes

1257



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