Publication Information

Title:
Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:393
Date:
2017-05-24

Author Information

Name Institution
Wei ZhangNanjing University
Ji-Zhou KongNanjing University
Zheng-Yi CaoNanjing University
Aidong LiNanjing University
Lai-Guo WangNanjing University
Lin ZhuNanjing University
Xin LiNanjing University
Yanqiang CaoNanjing University
Di WuNanjing University

Films

Plasma TiN



Thermal TiO2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Keywords

Notes

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