Publication Information

Title: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Type: Journal

Info: Nanoscale Research Letters (2017) 12:393

Date: 2017-05-24

DOI: http://dx.doi.org/10.1186/s11671-017-2164-z

Author Information

Name

Institution

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Films

Plasma TiN using Picosun R200

Deposition Temperature = 400C

7550-45-0

7664-41-7

Thermal HfO2 using Picosun R200

Deposition Temperature = 250C

352535-01-4

7732-18-5

Thermal TiO2 using Picosun R200

Deposition Temperature = 250C

7550-45-0

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Transistor Characteristics

Transistor Characterization

Keithley 4200-SCS

Substrates

Keywords

Notes

1048



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