Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:393
Date:
2017-05-24
Author Information
Name | Institution |
---|---|
Wei Zhang | Nanjing University |
Ji-Zhou Kong | Nanjing University |
Zheng-Yi Cao | Nanjing University |
Aidong Li | Nanjing University |
Lai-Guo Wang | Nanjing University |
Lin Zhu | Nanjing University |
Xin Li | Nanjing University |
Yanqiang Cao | Nanjing University |
Di Wu | Nanjing University |
Films
Plasma TiN
Thermal HfO2
Thermal TiO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
Notes
1048 |