Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride

Type:
Journal
Info:
Optical Materials Express, v. 9, n. 12, p. 4556--4563 (2019)
Date:
2019-09-12
DOI:
http://dx.doi.org/10.1364/OME.9.004556

Author Information

Name Institution
Sasha Woodward-GagnéPolytechnique Montréal
Nicolas Desjardins-LecavalierPolytechnique Montréal
Bill BaloukasPolytechnique Montréal
Oleg ZabeidaPolytechnique Montréal
Ludvik MartinuPolytechnique Montréal

Films

Thermal TiN

Hardware used: Kurt J Lesker ALD-150LX
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 335C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL 2100F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL 2100F

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: Agilent Cary 7000 Universal Measurement Spectrophotometer (UMS)

Substrates

SiO2

Notes

1616