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Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
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Publication Information
Title:
Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
Type:
Journal
Info:
Chem. Mater. 2017, 29, 998-1005
Date:
2017-01-09
Author Information
| Name | Institution |
|---|---|
| Elisa Atosuo | University of Helsinki |
| Miia Mäntymäki | University of Helsinki |
| Kenichiro Mizohata | University of Helsinki |
| Mikko J. Heikkilä | University of Helsinki |
| Jyrki Räisänen | University of Helsinki |
| Mikko K. Ritala | University of Helsinki |
| Markku A. Leskelä | University of Helsinki |
Films
Plasma TiN
Film/Plasma Properties
Substrates
| Silicon |
Keywords
Notes
| TiN layer used as barrier to prevent Li diffusion into substrate. |
| 1022 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |