Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films

Type:
Journal
Info:
Chem. Mater. 2017, 29, 998-1005
Date:
2017-01-09

Author Information

Name Institution
Elisa AtosuoUniversity of Helsinki
Miia MäntymäkiUniversity of Helsinki
Kenichiro MizohataUniversity of Helsinki
Mikko J. HeikkiläUniversity of Helsinki
Jyrki RäisänenUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki

Films

Plasma TiN


Film/Plasma Properties

Substrates

Silicon

Notes

TiN layer used as barrier to prevent Li diffusion into substrate.
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