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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
Type:
Journal
Info:
Chem. Mater. 2017, 29, 998-1005
Date:
2017-01-09
Author Information
| Name | Institution |
|---|---|
| Elisa Atosuo | University of Helsinki |
| Miia Mäntymäki | University of Helsinki |
| Kenichiro Mizohata | University of Helsinki |
| Mikko J. Heikkilä | University of Helsinki |
| Jyrki Räisänen | University of Helsinki |
| Mikko K. Ritala | University of Helsinki |
| Markku A. Leskelä | University of Helsinki |
Films
Plasma TiN
Film/Plasma Properties
Substrates
| Silicon |
Keywords
Notes
| TiN layer used as barrier to prevent Li diffusion into substrate. |
| 1022 |