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Publication Information

Title: Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films

Type: Journal

Info: Chem. Mater. 2017, 29, 998-1005

Date: 2017-01-09

DOI: http://dx.doi.org/10.1021/acs.chemmater.6b03586

Author Information

Name

Institution

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

Films

Plasma TiN using Beneq TFS-200

Deposition Temperature = 300C

7550-45-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Notes

TiN layer used as barrier to prevent Li diffusion into substrate.

1022

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