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Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films

Type:
Journal
Info:
Chem. Mater. 2017, 29, 998-1005
Date:
2017-01-09
DOI:
http://dx.doi.org/10.1021/acs.chemmater.6b03586

Author Information

Name Institution
Elisa AtosuoUniversity of Helsinki
Miia MäntymäkiUniversity of Helsinki
Kenichiro MizohataUniversity of Helsinki
Mikko J. HeikkiläUniversity of Helsinki
Jyrki RäisänenUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki

Films

Plasma TiN

Hardware used: Beneq TFS-200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Silicon

Notes

TiN layer used as barrier to prevent Li diffusion into substrate.
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