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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
Type:
Journal
Info:
Chem. Mater. 2017, 29, 998-1005
Date:
2017-01-09
Author Information
| Name | Institution |
|---|---|
| Elisa Atosuo | University of Helsinki |
| Miia Mäntymäki | University of Helsinki |
| Kenichiro Mizohata | University of Helsinki |
| Mikko J. Heikkilä | University of Helsinki |
| Jyrki Räisänen | University of Helsinki |
| Mikko K. Ritala | University of Helsinki |
| Markku A. Leskelä | University of Helsinki |
Films
Plasma TiN
Film/Plasma Properties
Substrates
| Silicon |
Notes
| TiN layer used as barrier to prevent Li diffusion into substrate. |
| 1022 |