Title: Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
Type: Journal
Info: Chem. Mater. 2017, 29, 998-1005
Date: 2017-01-09
DOI: http://dx.doi.org/10.1021/acs.chemmater.6b03586
Name
Institution
University of Helsinki
University of Helsinki
University of Helsinki
University of Helsinki
University of Helsinki
University of Helsinki
University of Helsinki
Characteristic
Analysis
Diagnostic
Silicon
TiN layer used as barrier to prevent Li diffusion into substrate.
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