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Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 23, L5-L8 (2005)
Date:
2005-04-25
DOI:
http://dx.doi.org/10.1116/1.1938981

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
E. LangereisEindhoven University of Technology
A. KemmerenPhilips
Fred RoozeboomPhilips
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiN

Hardware used: Custom Remote Inductively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Nucleation
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

SiO2

Notes

1258