Publication Information

Title: Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

Type: Journal

Info: Journal of Vacuum Science & Technology A 23, L5-L8 (2005)

Date: 2005-04-25

DOI: http://dx.doi.org/10.1116/1.1938981

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Philips

Philips

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma TiN using Custom ICP

Deposition Temperature = 400C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Nucleation

Ellipsometry

J.A. Woollam M-2000U

Resistivity, Sheet Resistance

Ellipsometry

J.A. Woollam M-2000U

Resistivity, Sheet Resistance

Four-point Probe

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Thickness

XRR, X-Ray Reflectivity

-

Thickness

TEM, Transmission Electron Microscope

-

Images

TEM, Transmission Electron Microscope

-

Thickness

SEM, Scanning Electron Microscopy

-

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Substrates

SiO2

Keywords

Notes

1258



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