Publication Information

Title: Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

Type: Journal

Info: Journal of Vacuum Science & Technology A 23, L5-L8 (2005)

Date: 2005-04-25

DOI: http://dx.doi.org/10.1116/1.1938981

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Philips

Philips

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma TiN using Custom ICP

Deposition Temperature = 400C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Nucleation

Ellipsometry

J.A. Woollam M-2000U

Resistivity, Sheet Resistance

Ellipsometry

J.A. Woollam M-2000U

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Thickness

XRR, X-Ray Reflectivity

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Thickness

SEM, Scanning Electron Microscopy

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Substrates

SiO2

Keywords

Notes

1258



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