Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 153 (11) G956-G965 (2006)
Date:
2006-06-06
Author Information
| Name | Institution |
|---|---|
| S. B. S. Heil | Eindhoven University of Technology |
| E. Langereis | Eindhoven University of Technology |
| Fred Roozeboom | Philips |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Si with native oxide |
Notes
| 1313 |