Publication Information

Title:
Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 153 (11) G956-G965 (2006)
Date:
2006-06-06

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
E. LangereisEindhoven University of Technology
Fred RoozeboomPhilips
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Electron Density, ne
Analysis: Langmuir Probe

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Si with native oxide

Keywords

Notes

1313