Publication Information

Title: Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition

Type: Journal

Info: Journal of The Electrochemical Society, 153 (11) G956-G965 (2006)

Date: 2006-06-06

DOI: http://dx.doi.org/10.1149/1.2344843

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Philips

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma TiN using Custom ICP

Deposition Temperature Range = 100-400C

7550-45-0

1333-74-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Resistivity, Sheet Resistance

Ellipsometry

J.A. Woollam M-2000U

Density

XRR, X-Ray Reflectivity

Bruker D8 Advance

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Signatone

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Plasma Species

OES, Optical Emission Spectroscopy

Ocean Optics USB 2000

Electron Density, ne

Langmuir Probe

Keithley 2400 Source Meter

Electron Temperature, Te

Langmuir Probe

Keithley 2400 Source Meter

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

NT-MDT Solver P47SPM

Substrates

Si with native oxide

Keywords

Notes

1313



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